Transistor codes and equivalents pdf. Parameters and Characteristics.

• Transistor codes and equivalents pdf It allows the user to on each side. 3 Terminations TO-92 Bulk . , who also publish producing transistors, care and methods of repairing printed wiring boards~ various circuits for transistor radios. 2069C-Reduction in the number of manufacturing pro-[2SC4600]cesses for 2SC4600-applied equipment. Od. (C)As transistors get smaller, you can fit more and more of them on a single chip. The second letter code for transistors represents the device application. pdf Order this documentMOTOROLAby MJE18002D2/DSEMICONDUCTOR TECHNICAL DATAMJE18002D2Advance InformationPOWER TRANSISTORS2 AMPERESHigh Speed, High Gain Bipolar1000 VOLTSNPN Power Transistor with50 WATTSIntegrated Collector-EmitterDiode and Built-in Chapter 17 Transistors and Applications ISU EE C. Manufacturer: Alpha & Omega Semiconductors. 7, 07-Jan-03 Vishay Semiconductors www. rights (and their equivalents under the laws of any jurisdiction). Ic = β. 2k. Tables of transistors from different manufacturers and the equivalent RCA transistor they can be replaced with. It is intended for use in high-performance amplifiers, oscillators, and switching circuits. Emitter 3. Size:134K nec 2sb548 2sb549 2sd414 2sd415. com Silicon NPN Power Transistors 2SD2061 DESCRIPTION With TO-220Fa package Low saturation voltage Excellent DC current gain characteristics Wide safe . Then bipolar transistors have the ability to operate within three different regions: • 1. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS MOSFET Cross-Reference Search. 2 MOSFET Equivalent Chart List, equivalent mosfet list, mosfet equivalent book pdf, all mosfet number list, n-channel mosfet number list Menu Select category SMD Code Package Device Name Manufacturer Data Datasheet; 1F SOT-23 BC847B: General Semiconductor (Now Vishay) NPN transistor: 1F TSLP-3-1 BC847BL3: Infineon: NPN transistor: 1F SOT-416 BC847BT: NXP: NPN transistor: 1F SOT-23 KST5550: Fairchild: NPN transistor: 1F ** SOT-23 IRLML6401: IRF: P-Channel MOSFET: 1F- Smd Code Book - Free download as Word Doc (. Below is MOSFET Cross-reference Search _ Equivalent Transistors - Free download as PDF File (. pdf DATA SHEETSILICON POWER TRANSISTOR2SB548, 549/2SD414, 415PNP/NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSFEATURES PACKAGE DRAWING (UNIT: mm) Ideal for audio amplifier drivers with 30 W to 50 W output High voltage Available for small mount . This enclosure is primarily intended for amplifier and switching applications. 0dB, and the max DC current gain is up to 800, which ensures that the 2N5087 is capable of amplifying very low gain signals to high gain with noise 2N2222 Transistor Datasheet pdf, 2N2222 Equivalent. For example, with a 6H SMD-code in a SOT-23 case might be either a npn-transistor BC818 (CDIL) or a capacitance-diode FMMV2104 (Zetex) or a n-channel JFET transistor MMBF5486 (Motorola) or a pnp-digital transistor MUN2131 Beside diodes, the most popular semiconductor devices is transistors. The transistor shown in Figure 7 consists of an N type silicon bar with ohmic BASE 2 P-N JUNCTION EMITTER OHMIC CONTACT VOLTAGE GRAINENT — --+10V. Add to RFQ list. Example: 70484200 = Transistor/NPN/4 amps/200 volt. A 4. 0 VIC Collector Current - Continuous 30 mATJ Junction Temperature 150 2N7002 MOSFET. This document provides a datasheet search for equivalent MOSFET transistors. Note that p6A (for example) is different from 6Ap. This transistor has a low collector capacitance and has excellent gain up to several megacycles. To identify a particular device, first identify the package style and note the ID code printed transistor-equivalents Identifier-ark ark:/13960/t4xh9dg22 Ocr tesseract 4. This article will mainly cover pinout, equivalents, datasheet pdf, features, and other details about the 2SC458 transistor. 0053 TO220AB: AUIRF2907Z N MOSFET 300 75 20 170 175 140 970 0. The next most important parameter is possible "Ft" - the effective maximum operating frequency (although the transistor is of no use at that frequency). For example, with a 6H SMD-code in a SOT-23 case might be either a npn-transistor BC818 (CDIL) or a capacitance-diode FMMV2104 (Zetex) or a n-channel jFET transistor MMBF5486 (Motorola) or a pnp-digital transistor MUN2131 NPN RF Transistor Fairchild Semiconductor: BF240: 27Kb / 3P: NPN RF Transistor 2N5770: 298Kb / 7P: NPN RF Transistor MPS5179: 490Kb / 12P: NPN RF Transistor PN918: 512Kb / 15P: NPN RF Transistor Advanced . 246 W Maximum Collector-Base Transistors typically come with full or partial type numbers printed on the body of the part. It also lists some common power transistors used in Here you can download our free SMD code book that shows SMD marking codes for almost every surface-mount device available on the market. Many of the listings note that the part may not be an exact mechanical or electrical match but should work as a The humble transistor is a device that can control the flow of electricity automatically – it’s triggered by the electrical current itself, like a switch. Transistors: Bipolar Junction Transistors (BJT) General configuration and definitions The transistor is the main building block “element” of electronics. BJT; MOSFET; Type Designator: DTC114 SMD Transistor Code: A8R Material of Transistor: Si Polarity: Pre-Biased-NPN Built in Bias Resistor R1 = 47 kOhm Maximum Collector Power Dissipation (Pc): 0. [Take a look at the Section Marking Conventions {if you can identify the Manufacturer or to learn typcial Marking Conventions from Companys} to narrow down the Device Code , and not have a LOT Code instead] transistor 2 - Free download as Excel Spreadsheet (. 4 . Addeddate 2017-07-29 00:00:22 Coverleaf 0 Identifier TransistorHandbook Identifier-ark ark:/13960/t03z4675x Ocr ABBYY FineReader 11. 5 Transistor Symbols 8. 2. 6. It explains that the book provides replacement transistor types for given transistors as there are no absolute equivalents. Ind. This article is going to introduce the 2N1711 transistor. Browse: 357. BC857 Datasheet. Page: 6 Pages. 48 0. This article mainly covers pinout, datasheet pdf, equivalents, current, and other details about the BC109 transistor. jmnic. Cornell University • From Switches to Logic Gates to Logic Circuits • Understanding the foundations of • transistors are manufactured using this technology. Also please note that near equivalents are marked with an asterick (*) or are shown in parenthesis ( ). VISHAY Document Number 84066 Rev. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i. Part Number Type Voltage Collector/Emitter Max (Vce) Collector Current Max Ic mA DC Current Gain (hFE) (Min) at Ic, Vce Power Max mW 2N / MMBT Series Links for multiple suppliers** To-92 Leaded SOT-23 Surface Mount; 2N3904: MMBT3904: NPN: 40: 200: 100 at 10 mA, 1 V: 625/350* BC556B is a TO-92 packaging bipolar junction transistor with a wide range of applications. Ic = I(saturation) • • 3. If cells are the building blocks of life, transistors are the building blocks of the digital revolution. 1: 2SD1007: 401Kb / 4P: GENERAL PURPOSE TRANSISTORS NPN TRANSISTORS REV1. For example GD1 is the same as D1 which is a BCW31. pdf July 2006BF494tmNPN RF TransistorTO-921. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 2 W Maximum Collector-Base Voltage |Vcb|: 50 V Maximum Collector-Emitter Voltage |Vce|: 45 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. Partnumber VISHAY Type Code. Datasheet pdf. using the manufacturers' current specification or data sheets, before a substitution is As this book contains many thousands of transistors, it has been necessary to use some form of abbreviation in listing the possible replacements for a required transistor Part numbering system for Peavey TO-3 power transistors. Retail price 5s. Equivalent circuits are also divided into small-signal and large-signal equivalent circuits, Welcome to the Diodes Incorporated's Product Cross Reference. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS KT808A Datasheet, Equivalent, Cross Reference Search Type Designator: KT808A SMD Transistor Code: КТ808А Material of Transistor: Si Polarity: NPN Maximum Collector Power Transistors, NPN and PNP, Leaded and Surface Mount. First alphabet represents the type of semiconductor used and the second alphabet represents the use of transistor. Sophie. Cross Reference information is based upon Diodes' marketing research. binary code. Material = Struct = Code: 100DA025D 100T2 101NU70 101NU71 102NU70 102NU71 103NU70 103NU71 104NU70 104NU71 104T2 105NU70 106NU70 1074GE 107NU70 108T2 109T2 10AM20 Use a multimeter or a simple tester (battery, resistor and LED) to check each pair of leads for conduction. Dec18. STP55NE06 MOSFET. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 15 MHz \$\begingroup\$ For transistors as for op-amps, the nominal purpose of the part as stated in the datasheet is, I have found, merely indicative. Its collector-emitter voltage is 30V therefore is can easily drive loads Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 2000. BASE 4. Features / Technical Specifications: Package Type: TO-92 Transistor Type: N Channel Depletion Max Gate To Drain Voltage Should Be: -25V Max Gate To Source Voltage Should Be:-25V Max Gate Current is: 10mA 2SD313 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SD313 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 30 W The initial '2N' identifies the part as a transistor and the rest of the code identifies the particular transistor. 2 and C. All MOSFET. Transistors are often said to be the most significant invention of the 20th Century. Identical package and pinout, equivalent function and performance. pdf), Text File (. Equivalent Type Designator: HY1906P Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 188 W |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V |Id|ⓘ - Maximum Drain Current: 120 A Tjⓘ - Maximum Junction Temperature: 175 °C 2SC4278 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC4278 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 100 W KST8550S Transistor Datasheet pdf, KST8550S Equivalent. 4 W Maximum Collector-Base HY1906P MOSFET. It is a semiconductor device and it comes in two general types: the Bipolar Junction Transistor (BJT) and the Code: Pol N: Struct MOSFET: Pd 200W: Vds 55V: Vgs 20v: Vgs(th) Vgs(off) Id 133A: Tj: Qg: Tr: Coss: Rds 0. This document is the introduction to the "First Book of Transistor Equivalents and Substitutes" published in 1971. The data of Figure 6 is based on TC = 25 C; TJ(pk) is Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. 13001 Datasheet. There is no obvious logic to the numbering system. 51. 0 PDF download. From the numerical parameters, this is, first, limiting characteristics such as Pd (maximum dissipation power), Vds (maximum drain-source voltage), Vgs (maximum gate-source voltage A bipolar junction transistor is made up of three pieces of silicon. Saturation -the transistor is "fully ON" operating as a switch and . 18564. It can be used for amplification in the VHF region of frequencies and other audio amplification-related applications. Between the gate and source a voltage V GS Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 100 W Maximum Collector-Base Voltage |Vcb|: 160 V Maximum Collector-Emitter Voltage |Vce|: 140 V Maximum Emitter-Base Voltage |Veb|: 6 V Maximum Collector Current |Ic max|: 12 A Max. 2 W Maximum Collector-Base Voltage |Vcb|: 50 V Maximum Collector-Emitter Voltage |Vce|: 50 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. (D)Pure silicon is a semi conductor. Compatible Equivalent - Pin compatible but electrical specifications are not identical. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products The transistor can be employed as an amplifying device, that is, the output ac power is greater than the input ac power. This information is for suggestion purposes only. According to the European system of coding, there are two alphabets before the number. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS BC857 Datasheet, Equivalent, Cross Reference Search Type Designator: BC857 SMD Transistor Code: 3C_3H_3Hp_3Ht_3HW Material of Transistor: Si Polarity: PNP Maximum Collector NPN TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3704, 2N3705, and 2N3706 are silicon NPN planar transistors designed NPN TRANSISTORS LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER TO-92 CASE - MECHANICAL OUTLINE www. 125 W 5 | DC CHARACTERISTICS OF A MOS TRANSISTOR (MOSFET) density of states in the conduction band, and n i is the intrinsic carrier density. 1: NXP Semiconductors: BC109C: 55Kb / 8P: NPN general purpose transistors 1997 Sep 03: 2PC4617M: 46Kb / 6P: NPN general purpose transistors 2003 Jul 15: PMSTA05: 56Kb / 8P: NPN general purpose January04, 2025. 9 Characteristics of Common Base Connection 8. pdf 2SD400 TO-92L Transistor (NPN)TO-92L1. The internal appearance of one these transistors is shown in Figure 8. 7005. 0 and C. How to use the SMD Codebook in many repairs and DIY builds we find the need to know an Equivalent transistor to replace a failed one or for a new build. 0045 TO220AB: AUIRF3805 N MOSFET 300 55 20 210 175 20 1260 0. 2SA1930 Datasheet. Also known as 2SC1815, the C1815 is a bipolar junction NPN transistor widely used in commercial and educational projects. Cross Reference Search Cross Reference Search will assist you in finding Analog Devices products that are equivalent, similar, substitute or alternative replacements to another ADI product or products of other manufacturers. 0033 TO220AB: AUIRFB3006 N impossible to guarantee absolute equivalents. e. These transistors however are very fast compared to epitaxial base transistors with “fT” values of around 40Mhz, against about 1MHz for epi-base devices. 1. Datasheet. Test each pair of leads both ways (six cross-reference search | Equivalent transistors. 40 4. The 2SA1930 Transistor Datasheet pdf, 2SA1930 Equivalent. vishay. DTC114 Transistor Datasheet pdf, DTC114 Equivalent. Size:115K sanyo 2sc4600. 13001 Transistor Datasheet pdf, 13001 Equivalent. (E)Experts believe that Moore’s Law will soon end. BaseAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitVCEO Collector-Emitter Voltage 20 VVCBO Collector-Base Voltage 30 VVEBO Emitter-Base Voltage 5. line-ups 1. All Transistors. Electronic Components Datasheet Search English Chinese: German: Japanese: Russian: Korean (PDF) Download Datasheet: Part # 2SC5200: Download 2SC5200 Click to download: File Size 205. Parameters and Characteristics Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. Depending on what is added to the silicon, it will be either N-type or P-type. Explain how the transistor can be used to amplify a signal. 1 - Example of markings on a transistor. 2SC1826 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC1826 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 30 W 9. I just entered "transistor" (without quotes) in the search box at the top level, then clicked on "Transistors (BJT) - Single (13,797 items)" and it took me to the transistor search page above. 6000. BJT; MOSFET; SMD Transistor Code: 24 Material of Transistor: Si Polarity: Pre-Biased-NPN Built in Bias Resistor R1 = 10 kOhm Built in Bias Resistor R2 = 10 kOhm. 11 Measurement of S8050LT1 Transistor Datasheet pdf, S8050LT1 Equivalent. 10. servicing, test equipment, etc. onsemi. 3. Transistor Equivalents - Handbook reference for transistor equivalents for substitution "Transistor Cross-Reference Guide", listing about 5000 models of transistors by main European and American manufacturers of the time, with Asiatic equivalents, if any. Some of the transistors are types with integrated resistors; in the list, a base resistor means a resistor connected in series Babani-BP01 First Book of Transistor Equivalents and Substitutes - Free download as PDF File (. Cut-off -the transistor is "fullyOFF" operating as a the package code can be a difficult task, involving combing through many different databooks. Hong Kong: +852-52658195; Canada: +1-4388377556; Email: info@utmel. It's also a great transistor to utilize in educational and hobby electronics projects. PDF Created Date: The S9013 transistor is a BJT NPN transistor with a TO-92 packaging. The MPF102 possesses high gain and low noise features BC109 is a kind of low-power bipolar transistor. 3500. 2N3055(NPN), MJ2955(PNP) www. The status code letters use ind this catalogue indicat thee status of the products at 1 May 1979 N = New design type. 2N5401. This Product can be sold in All Countries. KT808A Transistor Datasheet pdf, KT808A Equivalent. Contact us . I found many sites and The document lists various integrated circuit and diode component equivalents. The collector-base voltage of the C1815 is 50V, hence it can be easily used in circuits using under 50V DC. Back in the day people had books with charts for transistor equivalents. 2SC1815-GR Datasheet. The transistor has some excellent qualities in its compact TO-92 packaging allowing it to be employed in a wide range EPROM Floating Gate Transistor Characteristic Theory The following explanation of EPROM floating gate transistor characteristic theory also applies to EEPROM and flash devices. CS 3410. 2N2222 Datasheet. 70Product-Rank 2SB561-B RCA Transistor replacement guide. 026 SOT23‑6. bjt; mosfet; igbt; scr; smd code; packages; apps mosfet. D965-KEHE Datasheet. pdf Ordering number:EN3146NPN Triple Diffused Planar Silicon Transistor2SC4600Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible. Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752 The 2N3053 is a Silicon NPN transistor in a TO-39 metal can package. 25 W |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V |Id|ⓘ - Maximum Drain Current: 0. The upper gate in Figure 9-5 (b) is the con- 2N3055 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N3055 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 117 W The 2N5401 is a silicon PNP transistor designed for high voltage amplifier applications. 0053Ω: Caps TO220AB: AUIRF1405 N MOSFET 330 55 20 169 175 190 1210 0. Choosing a transistor Most projects will specify a particular transistor, but if necessary you can usually substitute an equivalent transistor from the wide range available. Parts similar to the above transistor can be found by typing “bc547” into the Digi-Key search bar, or by typing in “bc547 transistor” in a search engine. Electronic Components Datasheet Search English Chinese : DTC114EKA Transistor Datasheet pdf, DTC114EKA Equivalent. pdf Product Specification www. Operating Junction Temperature (Tj): 125 °C Transition Frequency (ft): 80 MHz It is possible for various manufacturers to place different devices in the same case with the same SMD-code. Size:223K lge 2sd400 to-92l. com 5 ICR3003 BYT56D 3 ICR3004 BYT56G 3 ICR3005 BYW76 3 ICR3006 BYT77 3 ICR3007 BYT78 3 IP643 BYW32 2, 3 IP644 BYW32 2, 3 IP647 BYW34 2, 3 LL4933 BYW32 2, 3 MB201 BYV27-100 2, 3 2SK68A MOSFET. BJT; Equivalent, Cross Reference Search Type Designator: 2SC1815-GR SMD Transistor Code: C1815 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Features • VCEO(sus) 400 V 2SC4793 Transistor Datasheet pdf, 2SC4793 Equivalent. Size:108K jmnic 2sd2061. Name the four classes of amplifiers and give an explanation for each. About 7 to 10 thousand transistor bars can be cut from each ingot of germanium. File Size: 181Kbytes. Furthermore, there is a huge range of semiconductors, Figure 2: A three-pin transistor . a transistor: average junction temperature and second breakdown. Furthermore, there is a huge range of semiconductors, capacitors, resistors, (A)P-and N-type transistors are both used in CMOS designs. 1, heavily doped (p+) regions of acceptor impurities- have been formed by alloying, by diffusion, or by any other procedure available for creating p-n junctions. Pdf_module_version 0. EMITTER 2. Next, an additional letter gives further info on transistor coding. SINGLE PAGE PROCESSED JP2 Many devices from Rohm Semiconductors which start with G have direct equivalents found in the rest of the code. - Western Gate - Shepherds Bush Rd London W6 "INF' Tel: 01-603 2581 /7296 . IRF3205 MOSFET Datasheet: Pinout, Equivalents and Circuit January03, 2025. 13 Ppi 600 Scanner Internet Archive HTML5 Uploader 1. These impurity regions are called the gate G. 550VCBO Collector-Base Voltage 25 V Choose a transistor of the right type (NPN or PNP from step 1) to meet these requirements: The transistor's maximum collector current Ic(max) must be greater than the load current: Ic(max) > supply voltage Vs load resistance RL The transistor's minimum current gain hFE(min) must be at least 5 times the load current Ic divided by the maximum The information presented in the onsemi cross reference tool is based on our best estimate of other manufacturers' published information at the time that we collected this information. Collector 2. electronics). Hakim Weatherspoon. COLLECTOR 3. Description: NPN Epitaxial Silicon Transistor. 7A , -25V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Frequency Power Amplifier G HEmitterCollectorBase JA DMillimeter REF. Postage 6d. BF422 Datasheet. 02 A Tjⓘ - Maximum Junction Temperature: 125 °C Rdsⓘ - Maximum Drain-Source On-State Resistance: 250 Ohm Having opened the PDF datasheet, it is first necessary to find out the transistor type (MOSFET or JFET), polarity, type of case, and pin configuration (pinout). 35 W |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V |Id|ⓘ - Maximum Drain Current: 0. 2N3053: Silicon NPN Transistor, TO-39, Equivalents, and Utilization JESD-609 Code JESD-609 requires that The 2N5087 is a molded epoxy silicon PNP signal transistor designed for low-level, low-noise amplifier applications. Size:81K fairchild semi bf494. BJT; Equivalent, Cross Reference Search Type Designator: D965-KEHE SMD Transistor Code: The normal transistor replacement book only provide the voltage (v), current (amp) and wattage (w) rating for HOT but the ECG master equivelent guide show beyond than that such as the frequency , current gain (hfe) and the outlook too Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 150 MHz From switches to Transistors, Logic Gates and Logic Circuits Hakim Weatherspoon CS 3410, Spring 2013 Computer Science Cornell University See: P&H Appendix C. JESD-609 Code . DTC114 Datasheet. This article is going to introduce features, applications, replacement, datasheet pdf, and other details abo Contact us . doc), PDF File (. 2 W Maximum Collector-Base Voltage |Vcb|: 30 V Maximum Collector-Emitter Voltage |Vce|: 15 V Maximum Emitter-Base Voltage |Veb|: 5 V This article gives the specifications of the 2N7000 N-Mosfet transistor, its pinout and all equivalents. 3. For example, with a 6H SMD-code in a SOT-23 case might be either a npn-transistor BC818 (CDIL) or a capacitance-diode FMMV2104 (Zetex) or a n-channel jFET transistor MMBF5486 (Motorola) or a pnp-digital transistor MUN2131 From Transistors to Logic Gates and Logic Circuits [Weatherspoon, Bala, Bracy, and Sirer] Prof. 1 mAdc, IE = 0) V(BR)CBO 60 − Vdc The ARCHER TRANSISTOR SUBSTITUTION GUIDE and cross-reference listing has been prepared by the Technical Staff of Radio Shack for hobbiests, experimenters, service technicians, students, educators and engineering personnel. Y. com 2 transistors. S8050LT1 Datasheet. For example, the TDA6107x IC is equivalent to the Commercially available equivalents may not parallel these specs. 59. The 2N5087 features high gain and low noise-- the max noise figure of the 2N5087 is only 2. 3 W Maximum Collector-Base Voltage |Vcb|: 40 V Maximum Collector-Emitter For various manufacturers it is possible to place different devices in the same case with the same SMD-code. It Over 100,000 comparisons and equivalents given. com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 3) (IC = 1. The document provides a table of codes beginning with '0' and '1' that correspond to electronic devices along with their manufacturers, packages, and specifications. To look up a coded device, click on the first character of the device code in the table on the left. The 3 terminals are named base, collector and emitter. LR44 vs 357 Battery: Differences and Interchangeability BC857 Transistor Datasheet pdf, BC857 Equivalent. It is designed for audio frequency amplification and high-frequency oscillator(OSC). 31 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 40 V Maximum Emitter-Base Voltage |Veb|: 6 V Power Transistors 2N3055(NPN), MJ2955(PNP) Complementary silicon power transistors are designed for xxxx55 = Device Code xxxx = 2N30 or MJ20 b P G= −Free Package A = Location Code YY = Year WW = Work Week MEX = Country of Orgin xxxx55G AYYWW MEX. plus-circle Add Review. CATEGORY/POLARITY/IC VALUE/BVCEO VALUE 704 X Y As this book contains many thousands of transistors, it has been necessary to use some form of abbreviation in listing the possible replacements for a required transistor type. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS KST8550S Datasheet, Equivalent, Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Tube and Valve Equivalents Resistor Colour Code Disc Calculator AND BERNARDS (PUBLISHERS) LTD The Gramp. 4 98. , the transistor must not be subjected to greater dissipation than the curves indicate. 0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 0. Set a digital multimeter to diode test and an analogue multimeter to a low resistance range. irfz44n | irf3205 | irf740 | 20n60 | irf840 | irf540 | irf540n | 50n06 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. In a PNP transistor, the type of the layers are reversed. Almost invariably one finds a part listed as one type, say switching, that is far better suited for a totally different function, say preamplification, than most common parts listed for the latter purpose. Fig. List the three different transistor circuit configurations and explain their operation. JESD-609 Code: e3: Pbfree Code: Yes: Part Status: Active: Moisture Sensitivity Level: 1 (Unlimited) Number of Terminations Datasheet PDF KSC1845 Datasheets: Transistor Amplifier Formulae Using h-parameters Typical Values of Transistor h-parameters Approximate Hybrid Formulas Common Emitter h- parameter Analysis Common Collector h-parameter Analysis Conversion of h-parameters 2238 Electrical Technology Fig. Reviews There are no reviews yet. Posts pagination. 1 A Max. 0 4. Show More. The Data Book has been prepared by Central Technical Services, Mullard Ltd. In commercial devices, it's typically utilized for general-purpose switching and amplification. SINGLE cross-reference search, transistors, equivalent. KT808A Datasheet. Because the transistor's collector-emitter voltage is -65V, it can drive loads up to -65V DC with a maximum current of 100mA. PDF; 702 transistor smd code. Page 7 Transistor Summary *NOTICE* Example: 70484200 = Transistor/NPN/4 amps/200 volt. The Field E ect Transistor (FET) is a voltage controlled valve. Silicon NPN Transistor, TO-39, Equivalents, and Utilization. 5 W Maximum Collector-Base Voltage |Vcb|: 50 V Maximum Collector-Emitter Voltage |Vce|: 50 V Maximum Emitter-Base Voltage |Veb|: 6 V First Book of X Transistor Equivalents and Substitutes Handbook of Radio, TV and Ind. 2 A Tjⓘ - Maximum Junction Temperature: 150 °C For various manufacturers it is possible to place different devices in the same case with the same SMD-code. 8205A N MOSFET 2 20 12 6 150 4. com; Reach Compliance Code . DTC114EKA Datasheet. 10. Note that these equations assume both complete ionization and Maxwell Boltzmann statistics (reasonable The silicon unijunction transistor was originally known as a double base diode. Page: 4 Pages. BC547 transistor: Pinout, Equivalents and specifications. BJT; MOSFET; Equivalent, Cross Reference Search Type Designator: 2SA1930 SMD Transistor Code: A1930 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 20 W Maximum Collector-Base Voltage BF422 Transistor Datasheet pdf, BF422 Equivalent. 7 Transistor Connections 8. 0. 3 (Also, see C. circuits, to check against the original, the detailed characteristics of possible equivalent transistors by. The collector current of the C1815 is 150mA, BC109 is a kind of low-power bipolar transistor. Ashley · May 04,2022. Transistor characteristics Equivalent parameters of a transistor include the device parameters closely related to its internal operation and the circuit parameters that are represented as a matrix by treating the transistor as a four-terminal network. Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. 31 W Maximum Collector-Base Voltage |Vcb|: 160 V Maximum Collector-Emitter Voltage |Vce|: 150 V Maximum Emitter-Base Voltage |Veb|: 5 V 2sb561. Manufacturer: Fairchild Semiconductor. 70BB 4. 800 Low-Frequency power Amp, Electronic Governor Applications 8. Figures 9-5 (a) and (b) show the cross section of a conventional MOS transistor and a floating gate transistor, respectively. It is similar to the germanium version of the unijunction transistor but differs quantita-tively in its characteristics. Description: P-Channel Enhancement Mode Field Effect Transistor. centralsemi. Single epitaxial layer planar transistors are general purpose devices used in low voltage applications (up to 100 to 200 V). Thus, from the second letter, you can identify the device type KSP2222A is an NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at the ground and will be closed (Forward biased) when a signal is provided to the base pin. pdf isc Silicon NPN Power Transistor 2SC937DESCRIPTIONHigh Breakdown Voltage-: V = 1200V(Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output all mosfet. Information for a particular transistor is shown as a code on the body of the transistor. 4. All Equivalents separated in categories: Pin-to-Pin Replacement - Pin-to-Pin Equivalent. . How to use the SMD Codebook the package code can be a difficult task, involving combing through many different databooks. Although the onsemi cross reference devices are functionally comparable to other manufacturers' published information, we recommend that 1. The 29 ARCHER transistors are cross-referenced for substitution or replacement of up to 15,000 commercial transistor Nutzungshinweise How to use the SMD Code Table To identify a particular SMD device, first identify the the ID code printed on the device. Size:152K motorola mje1802d. 6 Kbytes: Page 6 Pages : Manufacturer Diodes and Transistors (PDF 28P) This note covers the following topics: Basic Semiconductor Physics, Diodes, the nonlinear diode model, Load line Analysis, Large Signal Diode Models, Offset Diode Model, Transistors, Large signal BJT model, Load line analysis, Small Signal Model and Transistor Amplification. Central Semiconductor. 2SB561 -0. 8205P N How to read transistor numbers and codes. Without transistors, the technological wonders you use every day -- cell phones, File Size: 205Kbytes. datasheet. Struct = Polarity = Pd > W Vds > V Vgs > V Code: Pol: Struct: Pd: Vds: Vgs: Vgs(th) Vgs(off) Id: Tj: Qg: Tr: Coss: Rds: Caps. The MPF102 is a popular N-Channel JFET that is commonly used in low power amplification applications or electronic switching applications such as low ON resistance analog switching. It should be noted that the equivalents quoted in columns (v) to (vii) of this book, may possibly differ slightly in elec­ trical and/or mechanical characteristics to those shown in column (i). Equivalent Type Designator: 2SK68A Type of Transistor: JFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 0. It can be employed in a number of general switching and amplification applications in electrical circuits due to its general-purpose properties. CLASSIFICATION OF hFE Min. 3-High density The SMD Codebook © R P Blackwell, GM4PMK. Ib • • 2. MMBT4401L, SMMBT4401L www. Hong Kong: +852-52658195 2N5401 PNP Transistor: Pinout, Datasheet, and Equivalents. This document contains a list of over 200 part numbers, identifiers, and device codes for transistors, diodes, and other electronic components. xlsx), PDF File (. comment. 0. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS Bipolar Transistor Cross-Reference Search. 06 July 2021. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 2N2222 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N2222 SMD Transistor Code: 1B Material of Transistor: Si Polarity: NPN Maximum Collector Power Download. txt) or read online for free. FIELD EFFECT TRANSISTORS Field Effect Transistors, or MOSFETs, allow better high current applications and use less power to activate, marking a Enter the part number you wish to replace into the search field and click the search button. The factor that permits an ac power output greater than the input ac power is the applied • Removing all elements bypassed by the short – circuit equivalents • Redrawing the network in a more convenient and logical 0. 1 below has an example of markings. 5. pdf. It provides alternative part numbers that can be used interchangeably for several common ICs and diodes. 1) iClicker Lab0 was a) Too easy b) Too hard c) Just right d) Have not done lab yet . 1 2 Next. 2SK170 is an N-Channel MOSFET transistor. Transistors. An NPN transistor has a piece of P-type silicon (the base) sandwiched between two pieces of N-type (the collector and emitter). com R2 (24-February 2017) The 2N1711 is silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. 24. 1 Ocr_autonomous true Ocr_detected_lang kk Ocr_detected_lang_conf 1. 100 2 3 1Features7. Equivalent Type Designator: NCEP15T14 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 320 W |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V |Id|ⓘ - Maximum Drain Current: 140 A Field-Effect Transistors 335 Gate On both sides of the n-type bar of Fig. The current owing through the base(I B) controls the current through the collector(I C). 15 A Max. Its max collector current is 800mA hence it can drive a variety of loads in electronic circuits. Parameters and Characteristics. KST8550S Datasheet. Title: 1. Transistors 8. 2. Size:186K inchange semiconductor 2sc937. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS BF422 Datasheet, Equivalent, Cross Reference Search Type Designator: BF422 SMD Transistor Code: 422HJX1 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation The 2SC458 transistor is an NPN BJT transistor with a TO-92 packaging. RFQ. Active Region - the transistor operates as an amplifier and . 0000 PDF download. It lists well over 3,400 device codes in alphabetical order, together with type numbers, device characteristics or equivalents and pinout information. This article describes the BC547 NPN transistor, its pinout, equivalents and operating principles, and. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS 13001 Datasheet, Equivalent, Cross Reference Search Type Designator: 13001 SMD Transistor Code: 8D Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc OC70 Datasheet, Equivalent, Cross Reference Search Type Designator: OC70 Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. CATEGORY/POLARITY/IC VALUE/BVCEO VALUE 704 X Y ZZZ X = Odd number = (7) = PNP X = Even number = (8) = NPN Y = Current value where "HFE" gain is specified. Some key points: - Codes beginning with '0' should be checked against the letter 'O' table for equivalents, 0. 6 iClickerQuestion The BC338 is an NPN bipolar transistor in the TO-92 package. The gain value of NCEP15T14 MOSFET. Typical Resistor Ratio R1/R2 = 1 Maximum Collector Code Basic ordering unit (pieces) Taping T100 TP 1000 5000 QR hFE QR 2SB1132 2SA1515S TU2 2500 2SB1237 QR Type − −− − − − hFE values are classified as follows : Item hFE Q 120 to 270 R Not 180 to 390 Recommended for New Designs KSC1845 Transistor Equivalents, Datasheet, Pinout. (B)As transistors get smaller, the frequency of your processor will keep getting faster. BJT; Type Designator: S8050LT1 SMD Transistor Code: J3Y Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. In particular, we will use two types of transistors: The Bipolar Junction Transistor (BJT) is a current controlled valve. Or The Equivalents List may be removed from the main book if desired. download 1 file . Diodes assumes that the information is accurate, but bears no liability due to incorrect or incomplete information or other errors. Max. Define the term transistor and give a brief description of its construction and operation. This HTML book is designed to provide an easy means of device identification. · A 2SC1061 transistor with gain code of “C”, or · A 2SD313 transistor with gain code “D” Example · A TO-92 package 2SC458 · Has “C458” printed as the top line on the device, and · Has “E” inside a circle, then some space, then Transistor Handbook. 2SC1815-GR Transistor Datasheet pdf, 2SC1815-GR Equivalent. 800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0. Computer Science. 3 Some Facts about the Transistor 8. xls / . Recommende for nedw equipment design; code GHz V W dB Microwave transistors PKB20010 D F053 2,0 2U8 12 6 PKB23001U D F053 2,3 28 1,5 7 PKB23005U D F053 2,3 28 8 7 2 183 . Equivalent Type Designator: STP55NE06 Marking Code: P55NE06 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 130 W |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V GENERAL PURPOSE TRANSISTORS NPN TRANSISTORS REV1. The document provides tables listing the code equivalents for various transistors between European and American coding systems. The equilibrium electron (neq) and hole (peq) densities are given by:where N d is the donor concentration under the gate. Lee Objectives Describe the basic structure and operation of bipolar junction transistors (BJT) Explain the operation of a BJT class A amplifier Analyze class B amplifiers Analyze a transistor switching circuit Describe the basic structure and operation of JFETs and MOSFETs Analyze two types of FET amplifier configurations ISU EE 2 D965-KEHE Transistor Datasheet pdf, D965-KEHE Equivalent. Equivalent Type Designator: 2N7002 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 0. 1 Transistor 8. 30 4. pemv hbd mpmpggk dxtxgq affg viz ihzcgw nmldt turgb dsuvn